Open AccessComparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers
Author(s) -
Kang Yuan,
Yuxin Sun,
Yunhao Lu,
Xingbo Liang,
Daxi Tian,
Xiangyang Ma,
Deren Yang
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5025516
Subject(s) - wafer , materials science , silicon , doping , dislocation , fracture toughness , epitaxy , indentation , composite material , optoelectronics , metallurgy , layer (electronics)
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