Open AccessErratum: “Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects” [J. Appl. Phys. 120, 245705 (2016)]
Author(s) -
Animesh R. Chowdhury,
J. Dickens,
A. Neuber,
R. P. Joshi
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5024918
Subject(s) - trap (plumbing) , photoconductivity , ionization , impact ionization , optoelectronics , physics , condensed matter physics , materials science , quantum mechanics , ion , meteorology
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