Open AccessEnhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors
Author(s) -
Ching-Ting Lee,
ChunChi Wang
Publication year - 2018
Publication title -
aip advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5022029
Subject(s) - transconductance , materials science , optoelectronics , cutoff frequency , transistor , fin , oscillation (cell signaling) , electron mobility , mosfet , electrical engineering , chemistry , biochemistry , voltage , composite material , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom