z-logo
open-access-imgOpen Access
First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements
Author(s) -
Yubo Li,
Pengtao Wang,
Fei Hua,
Shijie Zhan,
Xiaozhi Wang,
Jikui Luo,
Hangsheng Yang
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5019955
Subject(s) - dopant , band gap , boron nitride , atom (system on chip) , doping , materials science , boron , density functional theory , atomic radius , crystallography , valence (chemistry) , condensed matter physics , chemistry , computational chemistry , nanotechnology , physics , optoelectronics , organic chemistry , computer science , embedded system

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom