First-principle approach based bandgap engineering for cubic boron nitride doped with group IIA elements
Author(s) -
Yubo Li,
Pengtao Wang,
Fei Hua,
Shijie Zhan,
Xiaozhi Wang,
Jikui Luo,
Hangsheng Yang
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5019955
Subject(s) - dopant , band gap , boron nitride , atom (system on chip) , doping , materials science , boron , density functional theory , atomic radius , crystallography , valence (chemistry) , condensed matter physics , chemistry , computational chemistry , nanotechnology , physics , optoelectronics , organic chemistry , computer science , embedded system
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