Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature
Author(s) -
N. V. Andreeva,
Alexey Ivanov,
Anatolii Petrov
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5019570
Subject(s) - bilayer , materials science , resistive touchscreen , resistive random access memory , atmospheric temperature range , insulator (electricity) , layer (electronics) , condensed matter physics , oxide , optoelectronics , electrode , nanotechnology , chemistry , membrane , electrical engineering , thermodynamics , physics , biochemistry , engineering , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom