Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
Author(s) -
A. Fujiwara,
Yuichi Sato
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5014994
Subject(s) - nanopillar , materials science , substrate (aquarium) , photoluminescence , silicon , optoelectronics , gallium nitride , doping , wide bandgap semiconductor , gallium , germanium , epitaxy , nanotechnology , metallurgy , nanostructure , layer (electronics) , geology , oceanography
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