Open AccessThe origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
Author(s) -
Shigefusa F. Chichibu,
Akira Uedono,
Kazunobu Kojima,
Hirotaka Ikeda,
K. Fujito,
Shinya Takashima,
Masaharu Edo,
K. Ueno,
Shoji Ishibashi
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5012994
Subject(s) - vacancy defect , materials science , video graphics array , annihilation , doping , band gap , wide bandgap semiconductor , recombination , optoelectronics , analytical chemistry (journal) , crystallography , chemistry , physics , cmos , biochemistry , quantum mechanics , gene , chromatography
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