Open AccessStrain relaxation of germanium-tin (GeSn) fins
Author(s) -
Yuye Kang,
YiChiau Huang,
Kwang Hong Lee,
Shuyu Bao,
Wei Wang,
Dian Lei,
Saeid MasudyPanah,
Yuan Dong,
Ying Wu,
Shengqiang Xu,
Chuan Seng Tan,
Xiao Gong,
YeeChia Yeo
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5012559
Subject(s) - materials science , raman spectroscopy , stress relaxation , wafer , relaxation (psychology) , germanium , fin , strain (injury) , silicon , optoelectronics , optics , composite material , psychology , social psychology , creep , physics , medicine
Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.
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