Open AccessNon-destructive determination of ultra-thin GaN cap layer thickness in AlGaN/GaN HEMT structure by angle resolved x-ray photoelectron spectroscopy (ARXPS)
Author(s) -
Anshu Goyal,
Brajesh S. Yadav,
R. Raman,
A. K. Kapoor
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5011801
Subject(s) - x ray photoelectron spectroscopy , materials science , high electron mobility transistor , layer (electronics) , analytical chemistry (journal) , spectroscopy , wide bandgap semiconductor , optoelectronics , chemistry , nanotechnology , nuclear magnetic resonance , transistor , physics , quantum mechanics , voltage , chromatography
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