Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes | Zendy

Frederik Westergaard Østerberg | Zendy; Maria-Louise Witthøft | Zendy; Shibesh Dutta | Zendy; Johan Meersschaut | Zendy; Christoph Adelmann | Zendy; Peter F. Nielsen | Zendy; Ole Hansen | Zendy; Dirch Hjorth Petersen | Zendy

Open Access

Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

Author(s) -

Frederik Westergaard Østerberg,

Maria-Louise Witthøft,

Shibesh Dutta,

Johan Meersschaut,

Christoph Adelmann,

Peter F. Nielsen,

Ole Hansen,

Dirch Hjorth Petersen

Publication year - 2018

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5010399

Subject(s) - equidistant , hall effect , sheet resistance , materials science , thin film , electrode , condensed matter physics , hall effect sensor , point (geometry) , electrical resistivity and conductivity , chemistry , physics , composite material , nanotechnology , mathematics , geometry , layer (electronics) , quantum mechanics , magnet

We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm) are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.

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