Open AccessDegradation effect of Auger recombination and built-in polarization field on GaN-based light-emitting diodes
Author(s) -
Muhammad Usman,
Kiran Saba,
DongPyo Han,
Nazeer Muhammad,
Shabieh Farwa,
Muhammad Rafiq,
Tanzila Saba
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5010241
Subject(s) - auger effect , optoelectronics , quantum efficiency , diode , light emitting diode , auger , materials science , polarization (electrochemistry) , quantum well , optics , chemistry , physics , atomic physics , laser
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