Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT | Zendy

Jae Kwon Jeon | Zendy; Jae Gwang Um | Zendy; Suhui Lee | Zendy; Jin Jang | Zendy

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Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Author(s) -

Jae Kwon Jeon,

Jae Gwang Um,

Suhui Lee,

Jin Jang

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5008435

Subject(s) - annealing (glass) , thin film transistor , materials science , x ray photoelectron spectroscopy , amorphous solid , threshold voltage , optoelectronics , transistor , analytical chemistry (journal) , crystallography , voltage , nanotechnology , chemistry , chemical engineering , metallurgy , electrical engineering , layer (electronics) , chromatography , engineering

We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing) and then at 250 oC in vacuum for 10 h (2nd step annealing). It is found that the threshold voltage (VTH) changes from 0.4 V to -2.0 V by the 1st step annealing and to +0.6 V by 2nd step annealing. The mobility changes from 18 cm2V-1s-1 to 25 cm2V-1s-1 by 1st step and decreases to 20 cm2V-1s-1 by 2nd step annealing. The VTH shift by positive bias temperature stress (PBTS) is 3.7 V for the as-prepared TFT, and 1.7 V for the 1st step annealed TFT, and 1.3 V for the 2nd step annealed TFT. The XPS (X-ray photoelectron spectroscopy) depth analysis indicates that the reduction in O-H bonds at the top interface (SiO2/a-IGZO) by 2nd step annealing appears, which is related to the positive VTH shift and smaller VTH shift by PBTS

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