Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier | Zendy

Hua Lv | Zendy; Diana C. Leitão | Zendy; Zhiwei Hou | Zendy; P. P. Freitas | Zendy; Susana Cardoso | Zendy; Thomas Kämpfe | Zendy; Johannes Müller | Zendy; J. Langer | Zendy; Jerzy Wrona | Zendy

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Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

Author(s) -

Hua Lv,

Diana C. Leitão,

Zhiwei Hou,

P. P. Freitas,

Susana Cardoso,

Thomas Kämpfe,

Johannes Müller,

J. Langer,

Jerzy Wrona

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5007656

Subject(s) - magnetoresistive random access memory , tunnel magnetoresistance , magnetoresistance , condensed matter physics , perpendicular , materials science , spin transfer torque , quantum tunnelling , current density , breakdown voltage , biasing , current (fluid) , spin (aerodynamics) , barrier layer , voltage , optoelectronics , electrical engineering , layer (electronics) , nanotechnology , magnetic field , random access memory , magnetization , physics , geometry , mathematics , quantum mechanics , engineering , computer science , computer hardware , thermodynamics

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