Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes | Zendy

Xiao Collins | Zendy; Adam P. Craig | Zendy; T. Roblin | Zendy; Andrew Marshall | Zendy

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Impact ionisation in Al0.9Ga0.1As0.08Sb0.92 for Sb-based avalanche photodiodes

Author(s) -

Xiao Collins,

Adam P. Craig,

T. Roblin,

Andrew Marshall

Publication year - 2018

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.5006883

Subject(s) - avalanche photodiode , impact ionization , electric field , photodiode , materials science , ionization , diode , avalanche breakdown , optoelectronics , infrared , voltage , optics , atomic physics , physics , breakdown voltage , detector , ion , quantum mechanics

We report the impact ionisation coefficients of the quaternary alloy Al0.9Ga0.1As0.08Sb0.92 lattice matched to GaSb substrates within the field range of 150 to 550 kV cm-1 using p-i-n and n-i-p diodes of various intrinsic thicknesses. The coefficients were found with an evolutionary fitting algorithm using a non-local recurrence based multiplication model and a variable electric field profile. These coefficients not only indicate that an avalanche photodiode can be designed to be function in the mid-wave infrared, but also can be operated at lower voltages. This is due to the high magnitude of the impact ionisation coefficients at relatively low fields compared to other III-V materials typically used in avalanche multiplication regions

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