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Extracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methods
Author(s) -
Stefan P. Schießl,
Marcel Rother,
Jan Lüttgens,
Jana Zaumseil
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5006877
Subject(s) - materials science , carbon nanotube , quantum capacitance , field effect transistor , electron mobility , capacitance , figure of merit , field effect , semiconductor , transistor , mobility model , optoelectronics , resistor , field (mathematics) , conductance , nanotechnology , condensed matter physics , computer science , physics , electrode , mathematics , telecommunications , pure mathematics , quantum mechanics , voltage

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