Open AccessTrap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks
Author(s) -
Ye Tian,
Jiang Lian-jun,
Xuejun Zhang,
Guangfu Zhang,
Qiuxiang Zhu
Publication year - 2018
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5006433
Subject(s) - memristor , quantum tunnelling , schottky barrier , schottky diode , materials science , nanotechnology , nano , field electron emission , doping , condensed matter physics , optoelectronics , electron , physics , quantum mechanics , diode , composite material
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