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Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
Author(s) -
Jonathan A. J. Rupp,
Madec Querré,
Andreas Kindsmüller,
MariePaule Besland,
Étienne Janod,
Regina Dittmann,
Rainer Waser,
Dirk J. Wouters
Publication year - 2018
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.5006145
Subject(s) - materials science , doping , amorphous solid , thin film , x ray photoelectron spectroscopy , oxide , vanadium , vanadium oxide , sputter deposition , resistive random access memory , optoelectronics , sputtering , analytical chemistry (journal) , nanotechnology , chemical engineering , crystallography , electrode , chemistry , metallurgy , chromatography , engineering

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