Carrier accumulation and depletion in point-contact capacitance-voltage measurements | Zendy

Yuichi Naitou | Zendy

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Carrier accumulation and depletion in point-contact capacitance-voltage measurements

Author(s) -

Yuichi Naitou

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5005861

Subject(s) - capacitance , scanning capacitance microscopy , differential capacitance , materials science , capacitor , semiconductor , voltage , depletion region , optoelectronics , biasing , semiconductor device , analytical chemistry (journal) , nanotechnology , electrical engineering , scanning electron microscope , electrode , chemistry , scanning confocal electron microscopy , composite material , chromatography , layer (electronics) , engineering

Scanning capacitance microscopy (SCM) is a variation of atomic force microscopy in which a conductive probe tip detects the bias modulated capacitance for the purpose of measuring the nanoscale semiconductor carrier concentration. SCM can be regarded as a point-contact capacitance-voltage system, and its capacitance-voltage properties are different from those of a conventional parallel-plate capacitor. In this study, the charge accumulation and depletion behavior of a semiconductor sample were closely investigated by SCM. By analyzing the tip-sample approach curve, the effective probe tip area and charge depletion depth could be quantitatively determined

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