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A new metal-insulator-metal (MIM) antifuse structure was fabricated with the amorphous Al2O3 synthesized by atomic layer deposition (ALD) as the dielectric and with either Ti or TiN as top electrode. The device with Ti electrode exhibits lower breakdown voltage compared to the TiN counterpart due to the more oxygen vacancies in Ti electrode antifuse. During breakdown, the effective programming current is found to be several orders larger than the compliance current, and resulting in extremely low on-state resistance. A hypothesis based on the electron trap of oxygen vacancy in the bulk of Al2O3 is proposed to explain this breakdown characteristics

Characterization of high κ Al2O3 based metal-insulator-metal antifuse

Characterization of high κ Al₂O₃ based metal-insulator-metal antifuse