Characterization of high κ Al2O3 based metal-insulator-metal antifuse | Zendy

Min Tian | Zendy; Huicai Zhong | Zendy; Li Li | Zendy; Zhigang Wang | Zendy

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Characterization of high κ Al₂O₃ based metal-insulator-metal antifuse

Author(s) -

Min Tian,

Huicai Zhong,

Li Li,

Zhigang Wang

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5004615

Subject(s) - materials science , metal insulator metal , tin , electrode , dielectric strength , atomic layer deposition , insulator (electricity) , amorphous solid , metal , dielectric , breakdown voltage , oxygen , optoelectronics , analytical chemistry (journal) , layer (electronics) , voltage , composite material , electrical engineering , metallurgy , capacitor , chemistry , crystallography , organic chemistry , chromatography , engineering

A new metal-insulator-metal (MIM) antifuse structure was fabricated with the amorphous Al2O3 synthesized by atomic layer deposition (ALD) as the dielectric and with either Ti or TiN as top electrode. The device with Ti electrode exhibits lower breakdown voltage compared to the TiN counterpart due to the more oxygen vacancies in Ti electrode antifuse. During breakdown, the effective programming current is found to be several orders larger than the compliance current, and resulting in extremely low on-state resistance. A hypothesis based on the electron trap of oxygen vacancy in the bulk of Al2O3 is proposed to explain this breakdown characteristics

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