Open AccessPolycrystalline diamond RF MOSFET with MoO3 gate dielectric
Author(s) -
Zeyang Ren,
Jinfeng Zhang,
Jincheng Zhang,
Chunfu Zhang,
Dazheng Chen,
Ru-Dai Quan,
Jiayin Yang,
Zhiyu Lin,
Yue Hao
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5004475
Subject(s) - transconductance , materials science , optoelectronics , cutoff frequency , mosfet , diamond , gate dielectric , equivalent series resistance , gate oxide , transistor , field effect transistor , dielectric , electrical engineering , composite material , voltage , engineering
We report the radio frequency characteristics of the diamond metal-oxide-semiconductor field effect transistor with MoO3 gate dielectric for the first time. The device with 2-μm gate length was fabricated on high quality polycrystalline diamond. The maximum drain current of 150 mA/mm at VGS = -5 V and the maximum transconductance of 27 mS/mm were achieved. The extrinsic cutoff frequency of 1.2 GHz and the maximum oscillation frequency of 1.9 GHz have been measured. The moderate frequency characteristics are attributed to the moderate transconductance limited by the series resistance along the channel. We expect that the frequency characteristics of the device can be improved by increasing the magnitude of gm, or fundamentally decreasing the gate-controlled channel resistance and series resistance along the channel, and down-scaling the gate length
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