Open AccessElectrical response of Pt/Ru/PbZr0.52Ti0.48O3/Pt capacitor as function of lead precursor excess
Author(s) -
Ibrahima Gueye,
G. Le Rhun,
O. Renault,
Emmanuel Defaÿ,
N. Barrett
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5004178
Subject(s) - materials science , dissipation factor , capacitance , x ray photoelectron spectroscopy , analytical chemistry (journal) , microstructure , capacitor , permittivity , dielectric , scanning electron microscope , electrode , composite material , optoelectronics , chemistry , nuclear magnetic resonance , electrical engineering , engineering , physics , chromatography , voltage
International audienceWe investigated the influence of the surface microstructure and chemistry of sol-gel grownPbZr0.52Ti0.48O3 (PZT) on the electrical performance of PZT-based metal-insulator-metal (MIM)capacitors as a function of Pb precursor excess. Using surface-sensitive, quantitative X-ray photo-electron spectroscopy and scanning electron microscopy, we confirm the presence of ZrOx surfacephase. Low Pb excess gives rise to a discontinuous layer of ZrOx on a (100) textured PZT film witha wide band gap reducing the capacitance of PZT-based MIMs whereas the breakdown field isenhanced. At high Pb excess, the nanostructures disappear while the PZT grain size increasesand the film texture becomes (111). Concomitantly, the capacitance density is enhanced by 8.7%,and both the loss tangent and breakdown field are reduced by 20 and 25%, respectively. The role ofthe low permittivity, dielectric interface layer on capacitance and breakdown is discussed
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