Open AccessErratum: “Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors” [Appl. Phys. Lett. 111, 013506 (2017)]
Author(s) -
Alvaro D. Latorre-Rey,
Flavio F. M. Sabatti,
John D. Albrecht,
Marco Saraniti
Publication year - 2017
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.5003410
Subject(s) - transistor , radio frequency , signal (programming language) , materials science , optoelectronics , electron , radio signal , condensed matter physics , physics , electrical engineering , computer science , engineering , quantum mechanics , voltage , programming language
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom