Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films | Zendy

Wenhe Wang | Zendy; Wei Tang | Zendy; Jiaqing Zhao | Zendy; Bei Bao | Zendy; Hui Xing | Zendy; Xiaojun Guo | Zendy; Shun Wang | Zendy; Ying Liu | Zendy

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Probing the intrinsic charge transport in indacenodithiophene-co-benzothiadiazole thin films

Author(s) -

Wenhe Wang,

Wei Tang,

Jiaqing Zhao,

Bei Bao,

Hui Xing,

Xiaojun Guo,

Shun Wang,

Ying Liu

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.5001986

Subject(s) - dielectric , materials science , semiconductor , transistor , optoelectronics , insulator (electricity) , acceptor , charge carrier , electron mobility , dipole , polymer , nanotechnology , chemistry , electrical engineering , condensed matter physics , physics , voltage , organic chemistry , composite material , engineering

Indacenodithiophene-co-benzothiadiazole (IDTBT) belongs to a class of donor-acceptor polymers, exhibiting high electronic mobility and low energetic disorder. Applying vacuum as dielectric enables us to investigate the intrinsic charge transport properties in IDTBT. Vacuum-gap IDTBT field-effect transistors (FET) show high mobilites approaching 1 cm2V−1s−1. In addition, with increasing dielectric constant of the gate insulators, the mobilites of IDTBT transistors first increase and then decrease. The reason could be attributed to effect of both charge carrier accumulation and the presence of dipolar disorder at the semiconductor/insulator interface induced by polar insulator layer

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