Open AccessEffects of gas flow rate on the structure and elemental composition of tin oxide thin films deposited by RF sputtering
Author(s) -
Muntaser Al-Mansoori,
S. Alshaibani,
Ahlam M. Al-Jaeedi,
Jisung Lee,
Daniel Choï,
Falah S. Hasoon
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5001883
Subject(s) - x ray photoelectron spectroscopy , sputtering , materials science , tin , tin oxide , amorphous solid , transparent conducting film , oxide , crystallite , volumetric flow rate , thin film , chemical engineering , analytical chemistry (journal) , nanotechnology , metallurgy , chemistry , organic chemistry , chromatography , engineering , physics , quantum mechanics
Photovoltaic technology is one of the key answers for a better sustainable future. An important layer in the structure of common photovoltaic cells is the transparent conductive oxide. A widely applied transparent conductive oxide is tin oxide (SnO2). The advantage of using tin oxide comes from its high stability and low cost in processing. In our study, we investigate effects of working gas flow rate and oxygen content in radio frequency (RF)-sputtering system on the growth of intrinsic SnO2 (i-SnO2) layers. X-ray diffraction results showed that amorphous-like with nano-crystallite structure, and the surface roughness varied from 1.715 to 3.936 nm. X-Ray photoelectron spectroscopy analysis showed different types of point defects, such as tin interstitials and oxygen vacancies, in deposited i-SnO2 films
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