Open AccessAdsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Author(s) -
Hanjong Paik,
Zhen Chen,
Edward B. Lochocki,
Ariel Seidner H.,
Amit Verma,
Nicholas Tanen,
Jisung Park,
Masaki Uchida,
ShunLi Shang,
BiCheng Zhou,
Mario Brützam,
Reinhard Uecker,
ZiKui Liu,
Debdeep Jena,
Kyle Shen,
David A. Muller,
Darrell G. Schlom
Publication year - 2017
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.5001839
Subject(s) - materials science , molecular beam epitaxy , epitaxy , doping , adsorption , crystallographic defect , substrate (aquarium) , crystallography , analytical chemistry (journal) , condensed matter physics , optoelectronics , nanotechnology , chemistry , layer (electronics) , organic chemistry , oceanography , geology , physics
Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K despite the high concentration (1.2 × 1011 cm−2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects—possibly (BaO)2 crystallographic shear defects or point defects—significantly reduce the electron mobility
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