Open AccessSi doped GaP layers grown on Si wafers by low temperature PE-ALD
Author(s) -
А.С. Гудовских,
A V Uvarov,
I. A. Morozov,
A I Baranov,
D. A. Kudryashov,
E. V. Nikitina,
A. A. Bukatin,
К.С. Зеленцов,
Ivan S. Mukhin,
Alexandra Levtchenko,
Sylvain Le Gall,
JeanPaul Kleider
Publication year - 2018
Publication title -
journal of renewable and sustainable energy
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.475
H-Index - 43
ISSN - 1941-7012
DOI - 10.1063/1.5000256
Subject(s) - materials science , heterojunction , band gap , doping , silicon , optoelectronics , atomic layer deposition , wafer , trimethylgallium , electron mobility , band bending , amorphous solid , analytical chemistry (journal) , layer (electronics) , nanotechnology , chemistry , metalorganic vapour phase epitaxy , crystallography , epitaxy , chromatography
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