Open AccessMetal diffusion properties of ultra-thin high-k Sc2O3 films
Author(s) -
Malgorzata Pachecka,
Chris Lee,
Jacobus Marinus Sturm,
F. Bijkerk
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.5000030
Subject(s) - materials science , diffusion barrier , tin , diffusion , barrier layer , metal , etching (microfabrication) , layer (electronics) , ruthenium , hydrogen , analytical chemistry (journal) , composite material , metallurgy , chemistry , catalysis , biochemistry , physics , organic chemistry , chromatography , thermodynamics
The diffusion barrier properties of Sc2O3 against metal diffusion were studied. Tin and ruthenium were used as probe materials to study the barrier properties of Sc2O3 in thickness ranges that are of relevance for gate materials. Tin deposition and hydrogen radical etching from Sc2O3 layers of 0.5-1.5 nm thickness, deposited on Ru, show that these Sc2O3 layers effectively block the diffusion of Sn into Ru. We show that Sn adhesion and etching depends strongly on the thickness of the Sc2O3 film. The etch-rate is found to be inversely proportional to the Sc2O3 layer thickness, which we attribute to Sc2O3 becoming a more effective charge transfer barrier at larger thicknesses
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom