AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer | Zendy

Xinke Liu | Zendy; Hong Gu | Zendy; Kuilong Li | Zendy; Lunchun Guo | Zendy; Deliang Zhu | Zendy; Youming Lu | Zendy; Jianfeng Wang | Zendy; HaoChung Kuo | Zendy; Zhihong Liu | Zendy; Wenjun Liu | Zendy; Lin Chen | Zendy; Jianping Fang | Zendy; KahWee Ang | Zendy; Ke Xu | Zendy; JinPing Ao | Zendy

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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Author(s) -

Xinke Liu,

Hong Gu,

Kuilong Li,

Lunchun Guo,

Deliang Zhu,

Youming Lu,

Jianfeng Wang,

HaoChung Kuo,

Zhihong Liu,

Wenjun Liu,

Lin Chen,

Jianping Fang,

KahWee Ang,

Ke Xu,

JinPing Ao

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4999810

Subject(s) - materials science , metalorganic vapour phase epitaxy , optoelectronics , chemical vapor deposition , wafer , electron mobility , transistor , wide bandgap semiconductor , dislocation , swing , layer (electronics) , nanotechnology , voltage , electrical engineering , epitaxy , composite material , physics , engineering , acoustics

This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications

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