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Native-oxide limited cross-plane thermal transport in suspended silicon membranes revealed by scanning thermal microscopy
Author(s) -
A.M. Massoud,
JeanMarie Bluet,
Valeria Lacatena,
Maciej Haras,
J.F. Robillard,
PierreOlivier Chapuis
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4997914
Subject(s) - scanning thermal microscopy , thermal conductivity , materials science , membrane , thermal conduction , silicon , scanning electron microscope , analytical chemistry (journal) , microscopy , scanning probe microscopy , oxide , nanotechnology , composite material , chemistry , optics , optoelectronics , chromatography , physics , biochemistry , metallurgy
By thermally characterizing nanometer-thin suspended silicon membranes with various micrometric lengths in ambient conditions, we determine simultaneously the spatial resolution of our Wollaston-probe scanning thermal microscopy experiment, which probes an area of (285 nm)2, and the effective thermal conductivity of the membranes of 40 W.m−1.K−1. This value is smaller than the in-plane thermal conductivity measured using other techniques in vacuum (∼60 W.m−1.K−1), revealing that both cross-plane and in-plane heat conduction are strongly affected by the native oxide in ambient conditions. This work also underlines that high-thermal conductivity samples can be characterized by scanning thermal microscopy when micro-patterned.

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