Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications | Zendy

Kristof J. P. Jacobs | Zendy; B. Stevens | Zendy; Răzvan Baba | Zendy; Osamu Wada | Zendy; T. Mukai | Zendy; R. A. Hogg | Zendy

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Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

Author(s) -

Kristof J. P. Jacobs,

B. Stevens,

Răzvan Baba,

Osamu Wada,

T. Mukai,

R. A. Hogg

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4997664

Subject(s) - quantum tunnelling , terahertz radiation , diode , optoelectronics , resonant tunneling diode , metalorganic vapour phase epitaxy , materials science , characterization (materials science) , current (fluid) , current density , fabrication , epitaxy , quantum well , laser , nanotechnology , electrical engineering , optics , physics , medicine , engineering , layer (electronics) , quantum mechanics , alternative medicine , pathology

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 – 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance

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