Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au | Zendy

Patrick H. Carey | Zendy; Jiancheng Yang | Zendy; F. Ren | Zendy; David C. Hays | Zendy; S. J. Pearton | Zendy; Soohwan Jang | Zendy; Akito Kuramata | Zendy; Ivan I. Kravchenko | Zendy

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Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Author(s) -

Patrick H. Carey,

Jiancheng Yang,

F. Ren,

David C. Hays,

S. J. Pearton,

Soohwan Jang,

Akito Kuramata,

Ivan I. Kravchenko

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4996172

Subject(s) - ohmic contact , annealing (glass) , contact resistance , materials science , transmission electron microscopy , electrical resistivity and conductivity , electron transfer , analytical chemistry (journal) , optoelectronics , composite material , chemistry , nanotechnology , electrical engineering , engineering , layer (electronics) , chromatography

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface

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