Domain wall conductivity in KTiOPO4 crystals | Zendy

Gustav Lindgren | Zendy; Carlota Canalias | Zendy

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Domain wall conductivity in KTiOPO4 crystals

Author(s) -

Gustav Lindgren,

Carlota Canalias

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4995651

Subject(s) - materials science , conductivity , ferroelectricity , electrical resistivity and conductivity , ionic conductivity , condensed matter physics , ion , displacement (psychology) , redistribution (election) , voltage , domain wall (magnetism) , ionic bonding , domain (mathematical analysis) , biasing , electrode , optoelectronics , chemistry , dielectric , mathematics , law , electrolyte , psychotherapist , mathematical analysis , magnetization , engineering , psychology , quantum mechanics , political science , magnetic field , physics , organic chemistry , politics , electrical engineering

We study the local ionic conductivity of ferroelectric domain walls and domains in KTiOPO4 single-crystals. We show a fourfold increase in conductivity at the domain walls, compared to that of the domains, attributed to an increased concentration of defects. Our current-voltage measurements reveal memristive-like behavior associated with topographic changes and permanent charge displacement. This behavior is observed for all the voltage sweep-rates at the domain walls, while it only occurs for low frequencies at the domains. We attribute these findings to the redistribution of ions due to the applied bias and their effect on the tip-sample barrier

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