Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films | Zendy

C. Chou | Zendy; ChihChang Lai | Zendy; ChihWei Chang | Zendy; Kai-Shin Wen | Zendy; Vincent K. S. Hsiao | Zendy

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Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films

Author(s) -

C. Chou,

ChihChang Lai,

ChihWei Chang,

Kai-Shin Wen,

Vincent K. S. Hsiao

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4994677

Subject(s) - pulsed laser deposition , materials science , thin film , chemical vapor deposition , torr , deposition (geology) , transmittance , plasma , silicon , remote plasma , oxygen , analytical chemistry (journal) , optoelectronics , nanotechnology , chemistry , paleontology , physics , organic chemistry , quantum mechanics , sediment , biology , chromatography , thermodynamics

We demonstrate the crystalline structures, optical transmittance, surface andcross-sectional morphologies, chemical compositions, and electrical properties of indiumgallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substratesthrough pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generatedoxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin filmsexhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to theincrease in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure(150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions forfabricating IGZO thin films with improved electrical properties

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