Open AccessSingle photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors
Author(s) -
Yuta Abe,
T. Umeda,
Mitsuo Okamoto,
Ryoji Kosugi,
Shinsuke Harada,
Moriyoshi Haruyama,
Wataru Kada,
Osamu Hanaizumi,
Shinobu Onoda,
Takeshi Ohshima
Publication year - 2018
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4994241
Subject(s) - materials science , mosfet , optoelectronics , semiconductor , transistor , photoluminescence , field effect transistor , wide bandgap semiconductor , oxide , polarization (electrochemistry) , photon , analytical chemistry (journal) , voltage , chemistry , optics , electrical engineering , physics , metallurgy , chromatography , engineering
We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.
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