Effect of chemical pressure on the electronic phase transition in Ca1−xSrxMn7O12 films
Author(s) -
Amanda Huon,
Dongkyu Lee,
Andreas Herklotz,
M. R. Fitzsimmons,
Ho Nyung Lee,
Steven J. May
Publication year - 2017
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4994089
Subject(s) - materials science , doping , phase transition , diffraction , oxide , electrical resistivity and conductivity , molecular beam epitaxy , phase (matter) , transition temperature , condensed matter physics , thin film , perovskite (structure) , epitaxy , lattice constant , analytical chemistry (journal) , crystallography , nanotechnology , optoelectronics , chemistry , optics , superconductivity , organic chemistry , electrical engineering , physics , engineering , layer (electronics) , metallurgy
We demonstrate how chemical pressure affects the structural and electronic phase transitions of the quadruple perovskite CaMn7O12 by Sr doping, a compound that exhibits a charge-ordering transition above room temperature making it a candidate for oxide electronics. We have synthesized Ca1−xSrxMn7O12 (0 ≤ x ≤ 0.6) thin films by oxide molecular beam epitaxy on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. The substitution of Sr for Ca results in a linear expansion of the lattice, as revealed by X-ray diffraction. Temperature-dependent resistivity and X-ray diffraction measurements are used to demonstrate that the coupled charge-ordering and structural phase transitions can be tuned with Sr doping. An increase in Sr concentration acts to decrease the phase transition temperature (T*) from 426 K at x = 0 to 385 K at x = 0.6. The presence of a tunable electronic phase transition, above room temperature, points to the potential applicability of Ca1−xSrxMn7O12 in sensors or oxide electronics, for example, via charge doping
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