Open AccessRoom temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
Author(s) -
Juwon Lee,
Ganapathi Subramaniam Nagarajan,
Yoon Shon,
Younghae Kwon,
Tae Won Kang,
Deuk Yong Kim,
Hyungsang Kim,
Hyunsik Im,
Chang-Soo Park,
Eun Kyu Kim
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4994044
Subject(s) - materials science , x ray photoelectron spectroscopy , doping , bismuth , electrical resistivity and conductivity , analytical chemistry (journal) , pulsed laser deposition , ferromagnetism , thin film , magnetic semiconductor , oxide , zinc , absorption spectroscopy , transmittance , optoelectronics , nanotechnology , nuclear magnetic resonance , condensed matter physics , chemistry , optics , metallurgy , physics , chromatography , engineering , electrical engineering
Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom