Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity | Zendy

Bingbing Tong | Zendy; Zhongdong Han | Zendy; Tingxin Li | Zendy; Chi Zhang | Zendy; Gerard Sullivan | Zendy; Rui-Rui Du | Zendy

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Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity

Author(s) -

Bingbing Tong,

Zhongdong Han,

Tingxin Li,

Chi Zhang,

Gerard Sullivan,

Rui-Rui Du

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4993894

Subject(s) - photoconductivity , quantum well , optoelectronics , materials science , doping , charge carrier , diode , condensed matter physics , light emitting diode , quantum dot , physics , optics , laser

We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers with light-emitting diode (LED) illuminations. The persistent photoconductivity could be negative or positive, depending on the specific doping structure and the illuminating photon energy. Compared to the widely-used electro-statically gating method, our findings provide a more flexible and non-invasive way to control the band structures and charge states in InAs/GaSb and InAs/GaInSb quantum wells (QWs)

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