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Influence of disorder on transfer characteristics of organic electrochemical transistors
Author(s) -
Jacob T. Friedlein,
Jonathan Rivnay,
David H. Dunlap,
Iain McCulloch,
Sean E. Shaheen,
Robert R. McLeod,
George G. Malliaras
Publication year - 2017
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4993776
Subject(s) - transconductance , transistor , materials science , organic semiconductor , contact resistance , thermal conduction , optoelectronics , semiconductor , nanotechnology , voltage , electrical engineering , engineering , composite material , layer (electronics)
Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications

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