Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform | Zendy

K Chiba | Zendy; Katsuhiro Tomioka | Zendy; Akinobu Yoshida | Zendy; Junichi Motohisa | Zendy

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Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

Author(s) -

K Chiba,

Katsuhiro Tomioka,

Akinobu Yoshida,

Junichi Motohisa

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4993689

Subject(s) - controllability , nanowire , materials science , optoelectronics , nanometre , composition (language) , photonics , phase (matter) , alloy , nanotechnology , composite material , chemistry , linguistics , philosophy , mathematics , organic chemistry

Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a μm-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio

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