A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr0.52Ti0.48)O3film grown on Ni foil | Zendy

Haribabu Palneedi | Zendy; Hong Goo Yeo | Zendy; Geon Tae Hwang | Zendy; Venkateswarlu Annapureddy | Zendy; JongWoo Kim | Zendy; Jong Jin Choi | Zendy; Susan TrolierMcKinstry | Zendy; Jungho Ryu | Zendy

Open Access

A flexible, high-performance magnetoelectric heterostructure of (001) oriented Pb(Zr_0.52Ti_0.48)O₃film grown on Ni foil

Author(s) -

Haribabu Palneedi,

Hong Goo Yeo,

Geon Tae Hwang,

Venkateswarlu Annapureddy,

JongWoo Kim,

Jong Jin Choi,

Susan TrolierMcKinstry,

Jungho Ryu

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4993239

Subject(s) - materials science , heterojunction , foil method , piezoelectricity , ferroelectricity , substrate (aquarium) , composite material , thin film , clamping , optoelectronics , nanotechnology , dielectric , mechanical engineering , oceanography , engineering , geology

In this study, a flexible magnetoelectric (ME) heterostructure of PZT/Ni was fabricated by depositing a (001) oriented Pb(Zr0.52Ti0.48)O3 (PZT) film on a thin, flexible Ni foil buffered with LaNiO3/HfO2. Excellent ferroelectric properties and large ME voltage coefficient of 3.2 V/cm⋅Oe were realized from the PZT/Ni heterostructure. The PZT/Ni composite’s high performance was attributed to strong texturing of the PZT film, coupled with the compressive stress in the piezoelectric film. Besides, reduced substrate clamping in the PZT film due to the film on the foil structure and strong interfacial bonding in the PZT/LaNiO3/HfO2/Ni heterostructure could also have contributed to the high ME performance of PZT/Ni

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