Al2O3on WSe2by ozone based atomic layer deposition: Nucleation and interface study | Zendy

Angelica Azcatl | Zendy; Qingxiao Wang | Zendy; Moon J. Kim | Zendy; Robert M. Wallace | Zendy

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Al₂O₃on WSe₂by ozone based atomic layer deposition: Nucleation and interface study

Author(s) -

Angelica Azcatl,

Qingxiao Wang,

Moon J. Kim,

Robert M. Wallace

Publication year - 2017

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4992120

Subject(s) - atomic layer deposition , nucleation , deposition (geology) , ozone , materials science , layer (electronics) , chemical engineering , dielectric , nanotechnology , analytical chemistry (journal) , chemistry , optoelectronics , environmental chemistry , organic chemistry , paleontology , sediment , engineering , biology

In this work, the atomic layer deposition process using ozone and trimethylaluminum (TMA) for the deposition of Al2O3 films on WSe2 was investigated. It was found that the ozone-based atomic layer deposition enhanced the nucleation of Al2O3 in comparison to the water/TMA process. In addition, the chemistry at the Al2O3/WSe2 interface and the surface morphology of the Al2O3 films exhibited a dependence on the deposition temperature. A non-covalent functionalizing effect of ozone on WSe2 at low deposition temperatures 30 °C was identified which prevented the formation of pinholes in the Al2O3 films. These findings aim to provide an approach to obtain high-quality gate dielectrics on WSe2 for two-dimensional transistor applications

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