Open AccessElectrical characterization of MoS2 field-effect transistors with different dielectric polymer gate
Author(s) -
Lan Liu,
Xudong Wang,
Li Han,
Bobo Tian,
Yan Chen,
Guangjian Wu,
Dan Li,
Mengge Yan,
Tao Wang,
Shuo Sun,
Hong Shen,
Tie Lin,
Jinglan Sun,
ChunGang Duan,
Jianlu Wang,
Xiangjian Meng,
Junhao Chu
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4991843
Subject(s) - materials science , ferroelectricity , dielectric , field effect transistor , gate dielectric , electron mobility , hysteresis , optoelectronics , transistor , polarization (electrochemistry) , condensed matter physics , voltage , electrical engineering , chemistry , physics , engineering
The characteristics of MoS2-nanoflake field-effect transistors (FETs) were studied by analyzing the transfer curves in MoS2-FETs with ferroelectric and general polymers as the gate dielectric. A clear hysteresis, opposite to the electron trapping–detrapping effect in traditional MoS2-FETs, was observed in the MoS2-FETs with ferroelectric poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] films. The effect carrier mobility of MoS2 nanoflakes reached approximately 95.6 cm2/Vs under the control of the polarization field of P(VDF-TrFE), whereas the effect carrier mobility was only approximately 15.3 cm2/Vs in MoS2-FETs with traditional dielectric poly(methyl methacrylate) (PMMA) films. Furthermore, the ferroelectric MoS2-FETs possess a higher ON/OFF resistance ratio (approximately 107) than do the PMMA MoS2-FETs (approximately 105)
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