Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping | Zendy

Hiroshi Tsuji | Zendy; Tatsuya Takei | Zendy; Mitsuru Nakata | Zendy; Masashi Miyakawa | Zendy; Yoshihide Fujisaki | Zendy; Toshihiro Yamamoto | Zendy

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Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

Author(s) -

Hiroshi Tsuji,

Tatsuya Takei,

Mitsuru Nakata,

Masashi Miyakawa,

Yoshihide Fujisaki,

Toshihiro Yamamoto

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4991688

Subject(s) - thin film transistor , doping , silicon , materials science , optoelectronics , conductivity , threshold voltage , subthreshold slope , sputtering , transistor , thin film , subthreshold conduction , nanotechnology , voltage , electrical engineering , layer (electronics) , chemistry , engineering

The effects of silicon doping on the properties of Zn-O-N (ZnON) films and on the device characteristics of ZnON thin-film transistors (TFTs) were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs

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