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Strain modification on electronic transport of the phosphorene nanoribbon
Author(s) -
Yawen Yuan,
Fang Cheng
Publication year - 2017
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4991494
Subject(s) - phosphorene , zigzag , condensed matter physics , monolayer , materials science , quantum tunnelling , fermi energy , fermi level , electron mobility , degenerate energy levels , strain engineering , graphene , electron , nanotechnology , optoelectronics , physics , silicon , geometry , quantum mechanics , mathematics
We demonstrate theoretically how local strains can be tailored to control quantum transport of carriers on monolayer armchair and zigzag phosphorene nanoribbon. We find that the electron tunneling is forbidden when the in-plane strain exceeds a critical value. The critical strain is different for different crystal orientation of the ribbons, widths, and incident energies. By tuning the Fermi energy and strain, the channels can be transited from opaque to transparent. Moreover, for the zigzag-phosphorene nanoribbon, the two-fold degenerate quasi-flat edge band splits completely under certain strain. These properties provide us an efficient way to control the transport of monolayer phosphorene-based microstructure

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