Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory | Zendy

Longfei Xiao | Zendy; Xiaobo Hu | Zendy; Xiufang Chen | Zendy; Peng Yan | Zendy; Xianglong Yang | Zendy; Xiangang Xu | Zendy

Open Access

Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch based on total reflection theory

Author(s) -

Longfei Xiao,

Xiaobo Hu,

Xiufang Chen,

Peng Yan,

Xianglong Yang,

Xiangang Xu

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4991408

Subject(s) - materials science , semiconductor , optoelectronics , laser , photoconductivity , duty cycle , optics , reflection (computer programming) , semiconductor laser theory , total internal reflection , voltage , physics , computer science , programming language , quantum mechanics

GaAs-based 5-mm-gap photoconductive semiconductor switches (PCSSs), with a thickness of 1 mm, are fabricated. A 60° beveling angle is used to make a periodic array of grooves on the surface of GaAs by mechanical processing. The laser beam should be reflected back when a vertical laser is illuminated on these grooves according to total internal reflection (TIR), which leads to an improvement of the light use efficiency (LUE) for the PCSS. The on-state resistance, ranging from 5.17 Ω to 2.14 Ω for the PCSSs, decreases in proportion with an increase of the duty cycle from 0% to 87.8%, where the pulse laser energy is 6.1 mJ at 1064 nm

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