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In this paper, thermal properties of InGaN-based diode lasers are investigated. The thermoreflectance technique was employed to study temperature distributions on the front facet of device. Measurements were performed, allowing investigation of the contribution of two main heat sources to the total temperature rise observed on the facet of device. It has been found that the contribution from reabsorption of laser emission at the facet, is much smaller than the one caused by Joule heating (electrical power). Additionally, devices have been investigated by means of SEM and FIB to determine the degradation sources. Inspection of the devices confirmed the lack of mirror damage or deposits. The main source of degradation was found to be located in the region of ridge and caused by extended defects. Our findings confirm the hypothesis that injected current is the major driving force of degradation

Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching