Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure | Zendy

Qianmiao Yu | Zendy; Yan Jia | Zendy; W. Lu | Zendy; Mengkang Wang | Zendy; Fangkun Li | Zendy; J. Zhang | Zendy; X. Zhang | Zendy; Y Q Ning | Zendy; Wu Jian | Zendy

Open Access

Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure

Author(s) -

Qianmiao Yu,

Yan Jia,

W. Lu,

Mengkang Wang,

Fangkun Li,

J. Zhang,

X. Zhang,

Y Q Ning,

Wu Jian

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4990630

Subject(s) - photoluminescence , laser , spontaneous emission , quantum well , materials science , optoelectronics , indium , emission spectrum , spectral line , amplified spontaneous emission , indium gallium arsenide , semiconductor laser theory , characterization (materials science) , gallium arsenide , quantum , indium phosphide , enhanced data rates for gsm evolution , optics , physics , semiconductor , nanotechnology , quantum mechanics , telecommunications , computer science

In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well

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