Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy | Zendy

Y. J. | Zendy; Yonggang Zhang | Zendy; Yi Gu | Zendy; S. P. Xi | Zendy; XiaoYa Chen | Zendy; Baolai Liang | Zendy; BorChau Juang | Zendy; Diana L. Huffaker | Zendy; Binyang Du | Zendy; Xiumei Shao | Zendy; J.X. Fang | Zendy

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Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Author(s) -

Y. J.,

Yonggang Zhang,

Yi Gu,

S. P. Xi,

XiaoYa Chen,

Baolai Liang,

BorChau Juang,

Diana L. Huffaker,

Binyang Du,

Xiumei Shao,

J.X. Fang

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4989884

Subject(s) - molecular beam epitaxy , doping , beryllium , photoluminescence , materials science , passivation , hall effect , analytical chemistry (journal) , optoelectronics , epitaxy , chemistry , electrical resistivity and conductivity , nanotechnology , engineering , chromatography , organic chemistry , layer (electronics) , electrical engineering

We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density

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