Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE) with Si concentration ranging from 1.6 x 10(16) to 7 x 10(18) cm(-3) was measured at room temperature and above using the 3 omega method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245 +/- 5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7 x 10(18) cm(-3)) was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering. (C) 2017 Author(s).

Funding Agencies|National Science Foundation [CBET-1336464]; Swedish Energy Agency [P39897-1]

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