Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices | Zendy

Huy Binh | Zendy; Quang Ho Luc | Zendy; Edward Yi Chang | Zendy; Sa Hoang Huynh | Zendy; Tuan Anh Nguyen | Zendy; Yueh Chin Lin | Zendy

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Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Author(s) -

Huy Binh,

Quang Ho Luc,

Edward Yi Chang,

Sa Hoang Huynh,

Tuan Anh Nguyen,

Yueh Chin Lin

Publication year - 2017

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4986147

Subject(s) - materials science , annealing (glass) , metal , oxide , dissociation (chemistry) , thermal stability , oxygen , mosfet , metal gate , bond energy , optoelectronics , capacitor , gate oxide , chemical engineering , metallurgy , molecule , electrical engineering , chemistry , voltage , transistor , organic chemistry , engineering

The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2− and OH− ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET

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